New developments in the liquid-phase epitaxy of Hg_1-xCd_xTeBERNARDI, S.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 21-28, issn 0921-5107Conference Paper

Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSbDOERSCHEL, J.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 142-146, issn 0921-5107Conference Paper

Studies of deep-level defecgts at III-V heterointerfacesKRISPIN, P.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 387-392, issn 0921-5107Conference Paper

Selective epitaxial growth of SiGe allosy-influence of growth parameters on film propertiesVESCAN, L.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 1-8, issn 0921-5107Conference Paper

Proceedings of the Italian Crystal Growth Symposium, Naples, Italy, 7-9 September 1999FORNARI, Roberto; PAORICI, Carlo; ZAGARI, Adriana et al.Materials chemistry and physics. 2000, Vol 66, Num 2-3, issn 0254-0584, 226 p.Conference Proceedings

Exciton transitions in InGaAs/InP quantum wells investigated by photocurrent spectroscopyARENA, C; SATKA, A; TARRICONE, L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 327-331, issn 0921-5107Conference Paper

Non-uniformity of Fe doping in semi-insulating LEC-grown InP and its characterization by various mapping methodsSEIDL, A; MOSEL, F; MÜLLER, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 107-110, issn 0921-5107Conference Paper

Real-space transfer in heterojunction structuresTHEREZ, F; AOUBA, S.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 408-411, issn 0921-5107Conference Paper

Spectroscopic investigation of deep levels related to the compensation mechanism of nominally uncoped semi-insulating InPHIRT, G; MONO, T; MÜLLER, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 101-106, issn 0921-5107Conference Paper

Analysis of IR absorption mapping of defects in liquid-encapsulated Czochralski GaAsBROZEL, M. R; TÜZEMEN, S.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 130-133, issn 0921-5107Conference Paper

Copper doping of GaSb single crystalsSESTAKOVA, V; STEPANEK, B.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 138-141, issn 0921-5107Conference Paper

Correlation of micro-non-uniformities and electron mobility in undoped liquid-encapsulated Czochralski and vertical-gradient freeze GaAsSIEGEL, W; KÜHNEL, G; KRETZER, U et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 84-86, issn 0921-5107Conference Paper

Effect of base dopant species on heterojunction bipolar transistor reliabilityABERNATHY, C. R; REN, F.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 232-237, issn 0921-5107Conference Paper

Proceedings of the E-MRS Conference, Symposium G. Substrates of Wide Bandgap MaterialsFORNARI, Roberto; ROJO, Juan Carlos; YAKIMOVA, Rositza et al.Journal of crystal growth. 2008, Vol 310, Num 5, issn 0022-0248, 150 p.Conference Proceedings

Generation and propagation of dislocations during crystal growthKLAPPER, H.Materials chemistry and physics. 2000, Vol 66, Num 2-3, pp 101-109, issn 0254-0584Conference Paper

Influence of organic dyes on potassium sulfate crystal growth: a joint morphological and atomic force microscopy analysisMORET, Massimo.Materials chemistry and physics. 2000, Vol 66, Num 2-3, pp 177-188, issn 0254-0584Conference Paper

Electron cyclotron resonance plasma deposition and etching of silicon nitride on GaSb for optoelectronic applicationsBONNOT, R; GOUSKOV, A; BOUGNOT, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 369-373, issn 0921-5107Conference Paper

Fabrication of photonic integrated circuits using quantum well intermixingMARSH, J. H; BRYCE, A. C.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 272-278, issn 0921-5107Conference Paper

Phenomenon of bistability in luminescenceKAZLAUSKAS, A; ULLRICH, B; ZERLAUTH, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 444-447, issn 0921-5107Conference Paper

Room-temperature scanning photoluminescence for mapping the lifetime and the doping density in compound semiconductorsKRAWCZYK, S. K; NUBAN, M. F.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 452-456, issn 0921-5107Conference Paper

Crystal growth and characterization of layered semimagnetic semiconductor compounds Cd_1-yMn_yIn_2-2xGa_2xS₄ATTOLINI, G; SAGREDO, V.Materials chemistry and physics. 2000, Vol 66, Num 2-3, pp 274-277, issn 0254-0584Conference Paper

MOVPE growth and study of InP-based materials: opportunities and challengesPELLEGRINO, Sergio; TARRICONE, Luciano.Materials chemistry and physics. 2000, Vol 66, Num 2-3, pp 189-196, issn 0254-0584Conference Paper

Recrystallization of strained Ge_xSi_1-x/Si layers with various Ge gradients and in the presence of impuritiesCORNI, F; TONINI, R; BALBONI, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 9-13, issn 0921-5107Conference Paper

Room-temperature photoluminescence characterization of thin-emitter GaAlAs/GaAs and GaAlAs/GaAs/Ge solar cellsTIMO, G; SOLEVI, L; NHUNG, T. H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 474-480, issn 0921-5107Conference Paper

Application of angle resolved X-ray photoelectron spectroscopy to the study of GaAs(001) surfaces and metal/GaAs(001) interfacesLEPINE, B; QUEMERAIS, A; JEZEQUEL, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 527-530, issn 0921-5107Conference Paper